Physics-Based Modeling and Validation of 2-D Schottky Barrier Field-Effect Transistors

In this work, we describe the charge transport in 2-D Schottky barrier field-effect transistors (SB-FETs) based on carrier injection at contacts. We first develop a numerical model for thermionic and field-emission processes of that occur contact. The is then simplified to yield an analytic equation current versus voltage ( ${I}$ – notation="LaTeX">${V}$ ) SB-FET. lateral electric field junction, controlling injection, obtained by accurately modeling electrostatics tunneling width. Unlike previous SB-FET models are valid near-equilibrium conditions, applicable broad bias range, as it incorporates pertinent physics thermionic, (TFE), from 3-D metal into semiconductor. validated against measurement data two-, three-, four-layer ambipolar MoTe2 SB-FETs fabricated our laboratory, well published unipolar using MoS2. Finally, model’s tested rigorously comparing model-generated TCAD simulation data.